20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (201) 376-2922 (212)227-6005 fax: (201) 376-8960 imps - u57 pnp silicon annular amplifier transistor . . . designed for general-purpose, high-voltage amplifier and driver applications. ? high collector-emitter breakdown voltage ? bvceo = 10 vdc @ 'c = '-0 madc ? high power dissipation - pd = 10 w@ tc ?* 25c ? complement to npn mps-u07 maximum ratings rating symbol value unit collector-emitter voltage vceo 100 vdc collector-base voltage vcb 100 vdc emitter-base voltage vgb 4.0 vdc collector current - continuous iq 2.0 adc total power dissipation ? ta = 25c pd 1.0 watt derate above 25c 8.0 mw/c total power dissipation <@ tc = 25c pq 10 watts derate above 25c 80 mw/c operating and storage junction tj.tstg -55 to +150 c temperature r ange thermal characteristics characteristic symbol max unit thermal resistance. junction to case r?jc 125 c/w thermal resistance, junction to ambient rfija 125 c/w amplifier transistor pnp silicon c - - ? ? a ? *=$" e b c i } j ? ? -lof- dim min b 6.60 c 5.41 d 038 f 3.18 6 2.s h 3.94 k 12.07 l 25.02 n 5.1 ik 2.39 r 1.14 j o ~f k c l h-(? ) "-"j~~ ' \ style 1: pin 1. emitter 2. base 3. collector max 7.24 5.66 0.53 3.33 49sc 4.19 12.70 25.53 jjsc 2.69 1.40 min max 0.260 0.285 0.213 0.223 joj is 0.021 0.125 0.131 0.100 bsc 0.155 0.165 0.475 0.500 0.9 15 1.005 0.201 bsc 0.094 0.106 0.04s 0.055 case 152-02 quality semi-conductors
tsemi-gontluctoi tpi.oclu.ct3l, one. 20 stern ave. springfield, new jersey 07081 u.s.a. mps-u57 telephone: (201) 376-2922 (212)227-6005 fax: (201) 376-8960 electrical characteristics (ta = 25c unless otherwise noted) characteristic min tvp max unit off characteristics collector-emitter breakdown voltage (0 dc" 1.0 madc, ib -0) emitter-bow breakdown voltage dc current gain (lc = 50 madc. vce * 1.0 vdc) (1c ? 250 madc, vce ? '- vd<=> (1c ? 500 madc, vce ? t.o vdc) collector-emitter saturation voltage (lc - 250 madc. ib - 10 madc) (1c - 250 madc. ib ? 25 madc) bate-emitter on voltage ' /" vr i _j ^\ ? 5.0 vdc j - 2sc ii s n kl si r? 'r \0 70 100 1? 1c, collector cuuhhtimai the data of figure 3 it based on tj(pi,) - 150c; tc i* ?"*? depending on conditions. at high case temperature!. tmr? limitation* will reduce the power that can be handled to ????? '?" than the limitationt imposed by second breakdown. quality semi-conductors
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